16 results
Not in the Least Concern: anthropogenic influences on a South-east Asian apple snail Pila scutata (Ampullariidae)
- Ting Hui Ng, Siong Kiat Tan, Amirrudin Ahmad, Do Van Tu, Ravindra C. Joshi, Wendy Y. Wang, Heok Hui Tan, Darren C.J. Yeo
-
- Article
-
- You have access Access
- HTML
- Export citation
-
South-east Asian apple snails, Pila spp., have been declining since the introduction of globally invasive, confamilial South American Pomacea spp., yet Pila ecology remains poorly studied, with most occurrence records unconfirmed. Pila scutata, a previously widespread species, presumed native to the Malay peninsula and assessed as Least Concern in the IUCN Red List, was formerly harvested for food, and may have experienced anthropogenic translocations. We surveyed the Malay peninsula (specifically Peninsular Malaysia and Singapore) to investigate the current distribution and genetic diversity of P. scutata. Six populations were found in Singapore, but only one in Peninsular Malaysia. Mitochondrial COI and 16S sequencing revealed that the Malaysian population shared a single haplotype of both genes with the Singapore populations (500 km distant). This low genetic diversity could stem from a recent anthropogenic introduction, which brings into question the true native range of P. scutata and, coupled with poorly resolved taxonomy of the genus, necessitates a reassessment of its IUCN Red List status. Introduced populations pose a dilemma, and the lack of genetic diversity is of concern in light of Pila decline throughout South-east Asia. Our results highlight that conservation management of P. scutata and its congeners must therefore be better informed by greater taxonomic resolution and more comprehensive investigations of their ecology, both in native and introduced ranges.
Vector form Intrinsic Finite Element Based Approach to Simulate Crack Propagation
- Y. F. Duan, S. M. Wang, R. Z. Wang, C. Y. Wang, E. C. Ting
-
- Journal:
- Journal of Mechanics / Volume 33 / Issue 6 / December 2017
- Published online by Cambridge University Press:
- 30 October 2017, pp. 797-812
- Print publication:
- December 2017
-
- Article
- Export citation
-
This paper presents a new approach to simulate the propagation of elastic and cohesive cracks under mode-I loading based on the vector form intrinsic finite element method. The proposed approach can handle crack propagation without requiring global stiffness matrices and extra weak stiffness elements. The structure is simulated by mass particles whose motions are governed by the Newton's second law. Elastic and cohesive crack propagation are simulated by proposed VFIFE-J-integral and VFIFE-FCM methods, respectively. The VFIFE-J-integral method is based on vector form intrinsic finite element (VFIFE) and J-integral methods to calculate the stress intensity factors at the crack tips, and the VFIFE-FCM method combines VFIFE and fictitious crack models (FCM). When the stress state at the crack tip meets the fracture criterion, the mass particle at the crack tip is separated into two particles. The crack then extends in the plate until the plate splits into two parts. The proposed VFIFE-J-integral method was validated by elastic crack simulation of a notched plate, and the VFIFE-FCM method by cohesive crack propagation of a three point bending beam. As assembly of the global stiffness matrix is avoided and each mass particle motion is calculated independently, the proposed method is easy and efficient. Numerical comparisons demonstrate that the present results predicted by the VFIFE method are in agreement with previous analytical, numerical and experimental works.
Contributors
-
- By Rose Teteki Abbey, K. C. Abraham, David Tuesday Adamo, LeRoy H. Aden, Efrain Agosto, Victor Aguilan, Gillian T. W. Ahlgren, Charanjit Kaur AjitSingh, Dorothy B E A Akoto, Giuseppe Alberigo, Daniel E. Albrecht, Ruth Albrecht, Daniel O. Aleshire, Urs Altermatt, Anand Amaladass, Michael Amaladoss, James N. Amanze, Lesley G. Anderson, Thomas C. Anderson, Victor Anderson, Hope S. Antone, María Pilar Aquino, Paula Arai, Victorio Araya Guillén, S. Wesley Ariarajah, Ellen T. Armour, Brett Gregory Armstrong, Atsuhiro Asano, Naim Stifan Ateek, Mahmoud Ayoub, John Alembillah Azumah, Mercedes L. García Bachmann, Irena Backus, J. Wayne Baker, Mieke Bal, Lewis V. Baldwin, William Barbieri, António Barbosa da Silva, David Basinger, Bolaji Olukemi Bateye, Oswald Bayer, Daniel H. Bays, Rosalie Beck, Nancy Elizabeth Bedford, Guy-Thomas Bedouelle, Chorbishop Seely Beggiani, Wolfgang Behringer, Christopher M. Bellitto, Byard Bennett, Harold V. Bennett, Teresa Berger, Miguel A. Bernad, Henley Bernard, Alan E. Bernstein, Jon L. Berquist, Johannes Beutler, Ana María Bidegain, Matthew P. Binkewicz, Jennifer Bird, Joseph Blenkinsopp, Dmytro Bondarenko, Paulo Bonfatti, Riet en Pim Bons-Storm, Jessica A. Boon, Marcus J. Borg, Mark Bosco, Peter C. Bouteneff, François Bovon, William D. Bowman, Paul S. Boyer, David Brakke, Richard E. Brantley, Marcus Braybrooke, Ian Breward, Ênio José da Costa Brito, Jewel Spears Brooker, Johannes Brosseder, Nicholas Canfield Read Brown, Robert F. Brown, Pamela K. Brubaker, Walter Brueggemann, Bishop Colin O. Buchanan, Stanley M. Burgess, Amy Nelson Burnett, J. Patout Burns, David B. Burrell, David Buttrick, James P. Byrd, Lavinia Byrne, Gerado Caetano, Marcos Caldas, Alkiviadis Calivas, William J. Callahan, Salvatore Calomino, Euan K. Cameron, William S. Campbell, Marcelo Ayres Camurça, Daniel F. Caner, Paul E. Capetz, Carlos F. Cardoza-Orlandi, Patrick W. Carey, Barbara Carvill, Hal Cauthron, Subhadra Mitra Channa, Mark D. Chapman, James H. Charlesworth, Kenneth R. Chase, Chen Zemin, Luciano Chianeque, Philip Chia Phin Yin, Francisca H. Chimhanda, Daniel Chiquete, John T. Chirban, Soobin Choi, Robert Choquette, Mita Choudhury, Gerald Christianson, John Chryssavgis, Sejong Chun, Esther Chung-Kim, Charles M. A. Clark, Elizabeth A. Clark, Sathianathan Clarke, Fred Cloud, John B. Cobb, W. Owen Cole, John A Coleman, John J. Collins, Sylvia Collins-Mayo, Paul K. Conkin, Beth A. Conklin, Sean Connolly, Demetrios J. Constantelos, Michael A. Conway, Paula M. Cooey, Austin Cooper, Michael L. Cooper-White, Pamela Cooper-White, L. William Countryman, Sérgio Coutinho, Pamela Couture, Shannon Craigo-Snell, James L. Crenshaw, David Crowner, Humberto Horacio Cucchetti, Lawrence S. Cunningham, Elizabeth Mason Currier, Emmanuel Cutrone, Mary L. Daniel, David D. Daniels, Robert Darden, Rolf Darge, Isaiah Dau, Jeffry C. Davis, Jane Dawson, Valentin Dedji, John W. de Gruchy, Paul DeHart, Wendy J. Deichmann Edwards, Miguel A. De La Torre, George E. Demacopoulos, Thomas de Mayo, Leah DeVun, Beatriz de Vasconcellos Dias, Dennis C. Dickerson, John M. Dillon, Luis Miguel Donatello, Igor Dorfmann-Lazarev, Susanna Drake, Jonathan A. Draper, N. Dreher Martin, Otto Dreydoppel, Angelyn Dries, A. J. Droge, Francis X. D'Sa, Marilyn Dunn, Nicole Wilkinson Duran, Rifaat Ebied, Mark J. Edwards, William H. Edwards, Leonard H. Ehrlich, Nancy L. Eiesland, Martin Elbel, J. Harold Ellens, Stephen Ellingson, Marvin M. Ellison, Robert Ellsberg, Jean Bethke Elshtain, Eldon Jay Epp, Peter C. Erb, Tassilo Erhardt, Maria Erling, Noel Leo Erskine, Gillian R. Evans, Virginia Fabella, Michael A. Fahey, Edward Farley, Margaret A. Farley, Wendy Farley, Robert Fastiggi, Seena Fazel, Duncan S. Ferguson, Helwar Figueroa, Paul Corby Finney, Kyriaki Karidoyanes FitzGerald, Thomas E. FitzGerald, John R. Fitzmier, Marie Therese Flanagan, Sabina Flanagan, Claude Flipo, Ronald B. Flowers, Carole Fontaine, David Ford, Mary Ford, Stephanie A. Ford, Jim Forest, William Franke, Robert M. Franklin, Ruth Franzén, Edward H. Friedman, Samuel Frouisou, Lorelei F. Fuchs, Jojo M. Fung, Inger Furseth, Richard R. Gaillardetz, Brandon Gallaher, China Galland, Mark Galli, Ismael García, Tharscisse Gatwa, Jean-Marie Gaudeul, Luis María Gavilanes del Castillo, Pavel L. Gavrilyuk, Volney P. Gay, Metropolitan Athanasios Geevargis, Kondothra M. George, Mary Gerhart, Simon Gikandi, Maurice Gilbert, Michael J. Gillgannon, Verónica Giménez Beliveau, Terryl Givens, Beth Glazier-McDonald, Philip Gleason, Menghun Goh, Brian Golding, Bishop Hilario M. Gomez, Michelle A. Gonzalez, Donald K. Gorrell, Roy Gottfried, Tamara Grdzelidze, Joel B. Green, Niels Henrik Gregersen, Cristina Grenholm, Herbert Griffiths, Eric W. Gritsch, Erich S. Gruen, Christoffer H. Grundmann, Paul H. Gundani, Jon P. Gunnemann, Petre Guran, Vidar L. Haanes, Jeremiah M. Hackett, Getatchew Haile, Douglas John Hall, Nicholas Hammond, Daphne Hampson, Jehu J. Hanciles, Barry Hankins, Jennifer Haraguchi, Stanley S. Harakas, Anthony John Harding, Conrad L. Harkins, J. William Harmless, Marjory Harper, Amir Harrak, Joel F. Harrington, Mark W. Harris, Susan Ashbrook Harvey, Van A. Harvey, R. Chris Hassel, Jione Havea, Daniel Hawk, Diana L. Hayes, Leslie Hayes, Priscilla Hayner, S. Mark Heim, Simo Heininen, Richard P. Heitzenrater, Eila Helander, David Hempton, Scott H. Hendrix, Jan-Olav Henriksen, Gina Hens-Piazza, Carter Heyward, Nicholas J. Higham, David Hilliard, Norman A. Hjelm, Peter C. Hodgson, Arthur Holder, M. Jan Holton, Dwight N. Hopkins, Ronnie Po-chia Hsia, Po-Ho Huang, James Hudnut-Beumler, Jennifer S. Hughes, Leonard M. Hummel, Mary E. Hunt, Laennec Hurbon, Mark Hutchinson, Susan E. Hylen, Mary Beth Ingham, H. Larry Ingle, Dale T. Irvin, Jon Isaak, Paul John Isaak, Ada María Isasi-Díaz, Hans Raun Iversen, Margaret C. Jacob, Arthur James, Maria Jansdotter-Samuelsson, David Jasper, Werner G. Jeanrond, Renée Jeffery, David Lyle Jeffrey, Theodore W. Jennings, David H. Jensen, Robin Margaret Jensen, David Jobling, Dale A. Johnson, Elizabeth A. Johnson, Maxwell E. Johnson, Sarah Johnson, Mark D. Johnston, F. Stanley Jones, James William Jones, John R. Jones, Alissa Jones Nelson, Inge Jonsson, Jan Joosten, Elizabeth Judd, Mulambya Peggy Kabonde, Robert Kaggwa, Sylvester Kahakwa, Isaac Kalimi, Ogbu U. Kalu, Eunice Kamaara, Wayne C. Kannaday, Musimbi Kanyoro, Veli-Matti Kärkkäinen, Frank Kaufmann, Léon Nguapitshi Kayongo, Richard Kearney, Alice A. Keefe, Ralph Keen, Catherine Keller, Anthony J. Kelly, Karen Kennelly, Kathi Lynn Kern, Fergus Kerr, Edward Kessler, George Kilcourse, Heup Young Kim, Kim Sung-Hae, Kim Yong-Bock, Kim Yung Suk, Richard King, Thomas M. King, Robert M. Kingdon, Ross Kinsler, Hans G. Kippenberg, Cheryl A. Kirk-Duggan, Clifton Kirkpatrick, Leonid Kishkovsky, Nadieszda Kizenko, Jeffrey Klaiber, Hans-Josef Klauck, Sidney Knight, Samuel Kobia, Robert Kolb, Karla Ann Koll, Heikki Kotila, Donald Kraybill, Philip D. W. Krey, Yves Krumenacker, Jeffrey Kah-Jin Kuan, Simanga R. Kumalo, Peter Kuzmic, Simon Shui-Man Kwan, Kwok Pui-lan, André LaCocque, Stephen E. Lahey, John Tsz Pang Lai, Emiel Lamberts, Armando Lampe, Craig Lampe, Beverly J. Lanzetta, Eve LaPlante, Lizette Larson-Miller, Ariel Bybee Laughton, Leonard Lawlor, Bentley Layton, Robin A. Leaver, Karen Lebacqz, Archie Chi Chung Lee, Marilyn J. Legge, Hervé LeGrand, D. L. LeMahieu, Raymond Lemieux, Bill J. Leonard, Ellen M. Leonard, Outi Leppä, Jean Lesaulnier, Nantawan Boonprasat Lewis, Henrietta Leyser, Alexei Lidov, Bernard Lightman, Paul Chang-Ha Lim, Carter Lindberg, Mark R. Lindsay, James R. Linville, James C. Livingston, Ann Loades, David Loades, Jean-Claude Loba-Mkole, Lo Lung Kwong, Wati Longchar, Eleazar López, David W. Lotz, Andrew Louth, Robin W. Lovin, William Luis, Frank D. Macchia, Diarmaid N. J. MacCulloch, Kirk R. MacGregor, Marjory A. MacLean, Donald MacLeod, Tomas S. Maddela, Inge Mager, Laurenti Magesa, David G. Maillu, Fortunato Mallimaci, Philip Mamalakis, Kä Mana, Ukachukwu Chris Manus, Herbert Robinson Marbury, Reuel Norman Marigza, Jacqueline Mariña, Antti Marjanen, Luiz C. L. Marques, Madipoane Masenya (ngwan'a Mphahlele), Caleb J. D. Maskell, Steve Mason, Thomas Massaro, Fernando Matamoros Ponce, András Máté-Tóth, Odair Pedroso Mateus, Dinis Matsolo, Fumitaka Matsuoka, John D'Arcy May, Yelena Mazour-Matusevich, Theodore Mbazumutima, John S. McClure, Christian McConnell, Lee Martin McDonald, Gary B. McGee, Thomas McGowan, Alister E. McGrath, Richard J. McGregor, John A. McGuckin, Maud Burnett McInerney, Elsie Anne McKee, Mary B. McKinley, James F. McMillan, Ernan McMullin, Kathleen E. McVey, M. Douglas Meeks, Monica Jyotsna Melanchthon, Ilie Melniciuc-Puica, Everett Mendoza, Raymond A. Mentzer, William W. Menzies, Ina Merdjanova, Franziska Metzger, Constant J. Mews, Marvin Meyer, Carol Meyers, Vasile Mihoc, Gunner Bjerg Mikkelsen, Maria Inêz de Castro Millen, Clyde Lee Miller, Bonnie J. Miller-McLemore, Alexander Mirkovic, Paul Misner, Nozomu Miyahira, R. W. L. Moberly, Gerald Moede, Aloo Osotsi Mojola, Sunanda Mongia, Rebeca Montemayor, James Moore, Roger E. Moore, Craig E. Morrison O.Carm, Jeffry H. Morrison, Keith Morrison, Wilson J. Moses, Tefetso Henry Mothibe, Mokgethi Motlhabi, Fulata Moyo, Henry Mugabe, Jesse Ndwiga Kanyua Mugambi, Peggy Mulambya-Kabonde, Robert Bruce Mullin, Pamela Mullins Reaves, Saskia Murk Jansen, Heleen L. Murre-Van den Berg, Augustine Musopole, Isaac M. T. Mwase, Philomena Mwaura, Cecilia Nahnfeldt, Anne Nasimiyu Wasike, Carmiña Navia Velasco, Thulani Ndlazi, Alexander Negrov, James B. Nelson, David G. Newcombe, Carol Newsom, Helen J. Nicholson, George W. E. Nickelsburg, Tatyana Nikolskaya, Damayanthi M. A. Niles, Bertil Nilsson, Nyambura Njoroge, Fidelis Nkomazana, Mary Beth Norton, Christian Nottmeier, Sonene Nyawo, Anthère Nzabatsinda, Edward T. Oakes, Gerald O'Collins, Daniel O'Connell, David W. Odell-Scott, Mercy Amba Oduyoye, Kathleen O'Grady, Oyeronke Olajubu, Thomas O'Loughlin, Dennis T. Olson, J. Steven O'Malley, Cephas N. Omenyo, Muriel Orevillo-Montenegro, César Augusto Ornellas Ramos, Agbonkhianmeghe E. Orobator, Kenan B. Osborne, Carolyn Osiek, Javier Otaola Montagne, Douglas F. Ottati, Anna May Say Pa, Irina Paert, Jerry G. Pankhurst, Aristotle Papanikolaou, Samuele F. Pardini, Stefano Parenti, Peter Paris, Sung Bae Park, Cristián G. Parker, Raquel Pastor, Joseph Pathrapankal, Daniel Patte, W. Brown Patterson, Clive Pearson, Keith F. Pecklers, Nancy Cardoso Pereira, David Horace Perkins, Pheme Perkins, Edward N. Peters, Rebecca Todd Peters, Bishop Yeznik Petrossian, Raymond Pfister, Peter C. Phan, Isabel Apawo Phiri, William S. F. Pickering, Derrick G. Pitard, William Elvis Plata, Zlatko Plese, John Plummer, James Newton Poling, Ronald Popivchak, Andrew Porter, Ute Possekel, James M. Powell, Enos Das Pradhan, Devadasan Premnath, Jaime Adrían Prieto Valladares, Anne Primavesi, Randall Prior, María Alicia Puente Lutteroth, Eduardo Guzmão Quadros, Albert Rabil, Laurent William Ramambason, Apolonio M. Ranche, Vololona Randriamanantena Andriamitandrina, Lawrence R. Rast, Paul L. Redditt, Adele Reinhartz, Rolf Rendtorff, Pål Repstad, James N. Rhodes, John K. Riches, Joerg Rieger, Sharon H. Ringe, Sandra Rios, Tyler Roberts, David M. Robinson, James M. Robinson, Joanne Maguire Robinson, Richard A. H. Robinson, Roy R. Robson, Jack B. Rogers, Maria Roginska, Sidney Rooy, Rev. Garnett Roper, Maria José Fontelas Rosado-Nunes, Andrew C. Ross, Stefan Rossbach, François Rossier, John D. Roth, John K. Roth, Phillip Rothwell, Richard E. Rubenstein, Rosemary Radford Ruether, Markku Ruotsila, John E. Rybolt, Risto Saarinen, John Saillant, Juan Sanchez, Wagner Lopes Sanchez, Hugo N. Santos, Gerhard Sauter, Gloria L. Schaab, Sandra M. Schneiders, Quentin J. Schultze, Fernando F. Segovia, Turid Karlsen Seim, Carsten Selch Jensen, Alan P. F. Sell, Frank C. Senn, Kent Davis Sensenig, Damían Setton, Bal Krishna Sharma, Carolyn J. Sharp, Thomas Sheehan, N. Gerald Shenk, Christian Sheppard, Charles Sherlock, Tabona Shoko, Walter B. Shurden, Marguerite Shuster, B. Mark Sietsema, Batara Sihombing, Neil Silberman, Clodomiro Siller, Samuel Silva-Gotay, Heikki Silvet, John K. Simmons, Hagith Sivan, James C. Skedros, Abraham Smith, Ashley A. Smith, Ted A. Smith, Daud Soesilo, Pia Søltoft, Choan-Seng (C. S.) Song, Kathryn Spink, Bryan Spinks, Eric O. Springsted, Nicolas Standaert, Brian Stanley, Glen H. Stassen, Karel Steenbrink, Stephen J. Stein, Andrea Sterk, Gregory E. Sterling, Columba Stewart, Jacques Stewart, Robert B. Stewart, Cynthia Stokes Brown, Ken Stone, Anne Stott, Elizabeth Stuart, Monya Stubbs, Marjorie Hewitt Suchocki, David Kwang-sun Suh, Scott W. Sunquist, Keith Suter, Douglas Sweeney, Charles H. Talbert, Shawqi N. Talia, Elsa Tamez, Joseph B. Tamney, Jonathan Y. Tan, Yak-Hwee Tan, Kathryn Tanner, Feiya Tao, Elizabeth S. Tapia, Aquiline Tarimo, Claire Taylor, Mark Lewis Taylor, Bishop Abba Samuel Wolde Tekestebirhan, Eugene TeSelle, M. Thomas Thangaraj, David R. Thomas, Andrew Thornley, Scott Thumma, Marcelo Timotheo da Costa, George E. “Tink” Tinker, Ola Tjørhom, Karen Jo Torjesen, Iain R. Torrance, Fernando Torres-Londoño, Archbishop Demetrios [Trakatellis], Marit Trelstad, Christine Trevett, Phyllis Trible, Johannes Tromp, Paul Turner, Robert G. Tuttle, Archbishop Desmond Tutu, Peter Tyler, Anders Tyrberg, Justin Ukpong, Javier Ulloa, Camillus Umoh, Kristi Upson-Saia, Martina Urban, Monica Uribe, Elochukwu Eugene Uzukwu, Richard Vaggione, Gabriel Vahanian, Paul Valliere, T. J. Van Bavel, Steven Vanderputten, Peter Van der Veer, Huub Van de Sandt, Louis Van Tongeren, Luke A. Veronis, Noel Villalba, Ramón Vinke, Tim Vivian, David Voas, Elena Volkova, Katharina von Kellenbach, Elina Vuola, Timothy Wadkins, Elaine M. Wainwright, Randi Jones Walker, Dewey D. Wallace, Jerry Walls, Michael J. Walsh, Philip Walters, Janet Walton, Jonathan L. Walton, Wang Xiaochao, Patricia A. Ward, David Harrington Watt, Herold D. Weiss, Laurence L. Welborn, Sharon D. Welch, Timothy Wengert, Traci C. West, Merold Westphal, David Wetherell, Barbara Wheeler, Carolinne White, Jean-Paul Wiest, Frans Wijsen, Terry L. Wilder, Felix Wilfred, Rebecca Wilkin, Daniel H. Williams, D. Newell Williams, Michael A. Williams, Vincent L. Wimbush, Gabriele Winkler, Anders Winroth, Lauri Emílio Wirth, James A. Wiseman, Ebba Witt-Brattström, Teofil Wojciechowski, John Wolffe, Kenman L. Wong, Wong Wai Ching, Linda Woodhead, Wendy M. Wright, Rose Wu, Keith E. Yandell, Gale A. Yee, Viktor Yelensky, Yeo Khiok-Khng, Gustav K. K. Yeung, Angela Yiu, Amos Yong, Yong Ting Jin, You Bin, Youhanna Nessim Youssef, Eliana Yunes, Robert Michael Zaller, Valarie H. Ziegler, Barbara Brown Zikmund, Joyce Ann Zimmerman, Aurora Zlotnik, Zhuo Xinping
- Edited by Daniel Patte, Vanderbilt University, Tennessee
-
- Book:
- The Cambridge Dictionary of Christianity
- Published online:
- 05 August 2012
- Print publication:
- 20 September 2010, pp xi-xliv
-
- Chapter
- Export citation
Layer Transfer of Hydrogen-Implanted Silicon Wafers by Thermal-Microwave Co-Activation
- Y. Y. Yang, C. H. Huang, Y. -K. Hsu, S. -J. Jeng, C. -C. Tai, S. Lee, H. -W. Chen, Q. Gan, C. -S. Chu, J. -H. Ting, C. S. Lai, T. -H. Lee
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 913 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0913-D03-13
- Print publication:
- 2006
-
- Article
- Export citation
-
Silicon on insulator (SOI) substrate is a key materials for nano-scaling IC device and the requirement for its crystal structure and quality is really high. Nanothick silicon thin film can be transferred onto a handle wafer from a donation wafer to form a SOI wafer after this process including hydrogen implantation of donation wafer, wafer bonding, and thermal treatment at moderately high temperatures of 400 to 600 degree centigrade. The expansion of the hydrogen molecular evolving from the implanted hydrogen ions interacting with silicon dangling bonds and trapped inside the microcavities located near the ion projected range resulted in exfoliation of the silicon thin film in the final heating step. The hydrogen molecules inside the microcavities tend to expand along the bonded interface rather than radially to form individual blisters. Finally, the fracture failure of ion implanted area parallel to the bonded interface near the projected ion range is formed by the sideway expansion of the cavities due to the diffusion supply of implanted hydrogen excited by thermal energy. Microwave processing can lower the activity energy to speed the chemical reaction so that it leads the format of microcavities occurring at low temperature by directly exciting the implanted hydrogen ions by microwave energy and also results in decreasing the critical dosage for layer splitting. However, microwave irradiation alone at room temperature causes the formation of lots of nucleus sites of micro-voids filled by hydrogen molecule which is immobility in silicon resulting in the issue of uniformity of transferred layer. In this study, the hydrogen implanted silicon substrate was irradiated by microwave at low temperature (200 degree centigrade) rather than microwave alone to co-activate the implanted hydrogen ions in silicon to increase not only kinetic energy but also mobility to successfully achieve a completely transferred layer in a short time.
Nanothick Layer Transfer of Hydrogen-implanted Wafer Using Polysilicon Sacrificial Layer
- C. H. Huang, C. L. Chang, Y. Y. Yang, T. Suryasindhu, W. -C. Liao, Y. -H. Su, P. W. Li, C. -Y. Liu, C. S. Lai, J. -H. Ting, C. S. Chu, C, -S Lee, T. -H. Lee
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 921 / 2006
- Published online by Cambridge University Press:
- 01 February 2011, 0921-T05-02
- Print publication:
- 2006
-
- Article
- Export citation
-
An ion implantation-wafer bonding-layer splitting based 2-D nanostructure material fabrication method using polysilicon sacrificial layer for forming nanothick SOI materials without using post-thinning processes is presented in this paper. Polysilicon layer was initially deposited on the thermal oxidized surface of silicon wafer prior to the ion implantation step to achieve the hydrogen-rich buried layer which depth from the top surface is less than 100 nm in the as-implanted silicon wafer. Before this as-implanted wafer being bonded with a handle wafer, the polysilicon layer was removed by a wet etching method. A nanothick silicon layer was then successfully transferred onto a handle wafer after wafer bonding and layer splitting steps. The thickness of the final transferred silicon layer was 100 nm measured by transmission electron microscopy (TEM).
Spin Lifetime Tuning in Zincblende Heterostructures and Tions to Spin Devices
- X. Cartoixà, D. Z.-Y. Ting, Y.-C. Chang
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 825 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, G6.6
- Print publication:
- 2004
-
- Article
- Export citation
-
We present analytical expressions for the D'yakonov-Perel' spin relaxation rates under the combined action of bulk and structural inversion asymmetry for [111] zincblende heterostructures when terms up to linear and third order in k are included in the Hamiltonian. We see for [111] heterostructures that, under the right conditions, the lowest-order-in-k component of the spin relaxation tensor can be made to vanish for all spin components at the same time. We study how the inclusion of terms of higher order in k affects these results. We finally discuss a proposal for a resonant spin lifetime transistor (RSLT) using the spin lifetime tuning concepts presented above, where the characteristics of the [111] device give the designer an added degree of freedom on the direction of the injected spins.
A method for making substrate-independent hardness measurements of soft metallic films on hard substrates by nanoindentation
- Ting Y. Tsui, C. A. Ross, G. M. Pharr
-
- Journal:
- Journal of Materials Research / Volume 18 / Issue 6 / June 2003
- Published online by Cambridge University Press:
- 31 January 2011, pp. 1383-1391
- Print publication:
- June 2003
-
- Article
- Export citation
-
A new method for making substrate-independent hardness measurements by nanoindentation techniques that applies to soft metallic films on very hard substrates is presented. The primary issue to be addressed is substrate-induced enhancement of indentation pileup and the ways it influences the indentation contact area. On the basis of experimental observations of soft aluminum films deposited on silicon, glass, and sapphire substrates, an empirical relationship was derived that relates the amount of pileup to the contact depth. From this relationship and the associated experimental observations, a method was developed that allows the intrinsic hardness of the film to be estimated, even when the indenter penetrates through the film into the substrate. The method should prove useful for very thin films (<100 nm) in which it is not possible to make measurements at penetration depths small enough to avoid subtrate effects.
Effects of Interface Roughness and Embedded Nanostructures on Device Properties
- D. Z.-Y. Ting, T. C. Mcgill, N. Y. Chen, J. N. Wang, R. G. Li, Y. Q. Wang, W. K. Ge, J. N. Schulman
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 584 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 223
- Print publication:
- 1999
-
- Article
- Export citation
-
We give an overview of the open-boundary planar supercell stack method (OPSSM), as a means for treating 3D quantum transport in mesoscopic tunnel structures. The flexibility of the method allows us to examine a variety of physical phenomena relevant to quantum transport. In this work we focus on the effects of interface roughness and embedded nanostructures in tunnel devices. Four representative applications of OPSSM are discussed: (1) interface roughness in double barrier resonant tunneling structures, (2) self-organized InAs quantum dot insertions in GaAs/AlAs double barrier structures, (3) tunneling characteristics of ultra-thin oxides with interface roughness, and, (4) embedded quantum wire model of dielectric breakdown. These examples demonstrate scattering and localization effects under different biasing conditions.
Scanning Stiffness Microscopy - A Novel Technique for Detecting Sub-Surface Cracks
- Ranjana Saha, Ting Y. Tsui, C. A. Ross, William D. Nix
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 473 / 1997
- Published online by Cambridge University Press:
- 10 February 2011, 285
- Print publication:
- 1997
-
- Article
- Export citation
-
Thin film delamination and sub-surface cracking represent important reliability issues for the semiconductor and thin film magnetic hard disk industries. Detecting such defects is often difficult and requires complicated specimen cross-sectioning and imaging. Because the sample preparation process itself may cause crack growth, such a method may be used only as a qualitative tool for defect characterization. In the present work, we introduce an in-situ non-destructive technique for detecting sub-surface cracks by continuously monitoring the contact stiffness while dragging a probe across a smooth surface at an ultra light load. As the probe encounters a sub-surface crack, the local contact stiffness decreases dramatically. The amount of reduction in contact stiffness depends on the crack size and geometry and the position of the crack relative to the surface. Results of the scanning stiffness microscopy experiments conducted on hard carbon and chromium thin films are described and discussed.
Sub-Half Micron Electroless Cu Metallization
- V. M. Dubin, Y. Shacham-Diamand, B. Zhao, P. K. Vasudev, C. H. Ting
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 427 / 1996
- Published online by Cambridge University Press:
- 15 February 2011, 179
- Print publication:
- 1996
-
- Article
- Export citation
-
Electroless Cu metallization has been fabricated by blanket electroless Cu deposition into the trenches in SiO2 dilectric layer on sputtered Cu seed layer with Ta diffusion layer and Al protection layer. Chemical-mechanical polishing of copper has been used to planarize the structure. Selective electroless CoWP layer has been deposited to protect inlaid Cu metallization.
Fatigue Crack Growth Behavior of Small Sn-Bi-Ag Solder Joints
- Tao Liu, M. A. Korhonen, S. Ting, D. Kim, C.-Y. Li
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 390 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 177
- Print publication:
- 1995
-
- Article
- Export citation
-
Reliability of solder interconnects is normally characterized by extrapolation of bulk solder reliability data, such as crack growth measurements of solder materials in the bulk form. In the present study, experimental evidence will be presented to show that crack growth, which is the most commonly observed failure mode in small solder joints strongly depends on the size and shape of the joint cross-section. Furthermore, the crack growth rate can be appropriately correlated to the size of the intense plastic yielding zone at the crack tip using a plastic decohesion argument.
Mechanical Properties of Amorphous Hard Carbon Films Prepared by Cathodic ARC Deposition
- Simone Anders, André Anders, Joel W. Ager III, Zhi Wang, George M. Pharr, Ting Y. Tsui, Ian G. Brown, C. Singh Bhatia
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 383 / 1995
- Published online by Cambridge University Press:
- 15 February 2011, 453
- Print publication:
- 1995
-
- Article
- Export citation
-
Cathodic arc deposition combined with macroparticle filtering of the plasma is an efficient and versatile method for the deposition of amorphous hard carbon films of high quality. The film properties can be tailored over a broad range by varying the energy of the carbon ions incident upon the substrate and upon the growing film by applying a pulsed bias technique. By varying the bias voltage during the deposition process specific properties of the interface, bulk film and top surface layer can be obtained. We report on nanoindentation and transmission electron microscopy studies as well as stress measurements of cathodic-arc amorphous hard carbon films deposited with varied bias voltage. The investigations were performed on multilayers consisting of alternating hard and soft amorphous carbon.
A Seeded Channel Approach to Silicon-On-Insulator Technology
- C. H. Ting, W. Baerg, H. Y. Lin, B. Siu, T. Hwa, J. C. Sturm, J. F. Gibbons
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 53 / 1985
- Published online by Cambridge University Press:
- 28 February 2011, 77
- Print publication:
- 1985
-
- Article
- Export citation
-
A seeded channel approach was developed to avoid the short comings of the conventional SOI structure such as grain or sub-grain boundaries in the channel region, floating substrate effects, etc. In this approach, the gate of each FET is located above its own seed window to insure that single crystalline material is obtained for the channel region. The source and drain regions, however, are located in the recrystallized silicon over Si02 for improved isolation and minimizing junction capacitance. Recrystallization was obtained in 4" silicon wafers by using an Ar laser and a computer controlled X-Y stage with heated substrate holder. Problems encountered in laser recrystallization, such as, reflectivity variations over seed and SOI regions, surface ripples, pittings, etc., were eliminated by optimizing the thin film thickness of the isolation oxide, polysilicon, and the capping oxide. This technology was used successfully to fabricate FET devices using a standard production n-MOS process. Good device characteristics were obtainred using 400Å gate oxide and channel length ranging from 1um to 50um. The measured electron mobility in the channel region is, however still lower than the ideal bulk values.
Silicides and Rapid Thermal Annealing
- F. M. d'Heurle, R. T. Hodgson, C. Y. Ting
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 52 / 1985
- Published online by Cambridge University Press:
- 26 February 2011, 261
- Print publication:
- 1985
-
- Article
- Export citation
-
In the first part of this paper the role of rapid thermal annealing in sulicide processing is viewed from a theoretical point of view with respect to what is known about metal-silicon reactions. The second part is a brief survey of the quickly expanding literature on the rapid thermal annealing of silicides. Whereas RTA does not appear to solve all, or perhaps even any, of the problems encountered in the use of silicides, it is concluded that RTA presents a number of definite advantages.
ZrN Diffusion Barrier in Aluminum Metallization Schemes
- L. Krusin-Elbaum, M. Wittmer, C.-Y. Ting, J. J. Cuomo
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 18 / 1982
- Published online by Cambridge University Press:
- 15 February 2011, 81
- Print publication:
- 1982
-
- Article
- Export citation
-
We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.
Atomic Motion of Dopant During Interfacial Silicide Formation
- M. Wittmer, C.-Y. Ting, K. N. Tu
-
- Journal:
- MRS Online Proceedings Library Archive / Volume 18 / 1982
- Published online by Cambridge University Press:
- 15 February 2011, 191
- Print publication:
- 1982
-
- Article
- Export citation
-
The redistribution of implanted dopant atoms during silicide formation has attracted much interest recently because of its important implications for shallow junction device technology. Ion channeling and electrical measurements have shown that dopant atoms are pushed ahead in front of the moving silicide-silicon interface during the growth of near-noble metal silicides. However, dopant redistribution has not been observed with refractory metal silicides. This unique feature of near-noble metal silicides is discussed in conjunction with the growth kinetics of these silicides.